TEM analysis of Ge-on-Si MOSFET structures with HfO<sub>2</sub> dielectric for high performance PMOS device technology
D J Norris; T Walther; A G Cullis; M Myronov; A Dobbie; T Whall; E H C Parker; D R Leadley; B De Jaeger; W Lee; M Meuris; J Watling; A Asenov
Журнал:
Journal of Physics: Conference Series
Дата:
2010-02-01
Аннотация:
In this paper, we present a (scanning) transmission electron microscopy analysis of novel Ge-on-Si MOSFETs which incorporate a high-k HfO<sub>2</sub> dielectric and TaN/TiN metal gate electrodes. A key feature of these devices is the incorporation of a very thin (~1nm) Si passivation layer on top of the Ge virtual substrate, which is partially oxided to form SiO<sub>2</sub> (~0.5nm), before depositing the HfO<sub>2</sub> dielectric and TaN and TiN metal gate electrodes. Our results confirm the architecture of the device structures and the existence of Si passivation.
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