| Автор | V S Bakardjieva |
| Автор | Z I Alexieva |
| Автор | G D Beshkov |
| Автор | E S Mateev |
| Дата выпуска | 2010-04-01 |
| dc.description | The effect was investigated of nitrogen and ammonia plasma treatment of monocrystalline Si wafers. The experiments were carried out in a plasma-enhanced chemical vapor deposition reactor. The wafers were subjected to N<sub>2</sub> and NH<sub>3</sub> plasma treatment for varying times at temperature of 380 °C. The plasma treated surfaces were studied by transmission electron microscopy with C-Pt replicas, reflection high-energy electron diffraction and Auger electron spectroscopy. The results point to the growth of an amorphous layer on the surface. The Auger electron spectroscopy depth profiles obtained by sputtering show the presence of an oxynitride layer with varying composition depending on the time of plasma treatment. The Auger electron spectroscopy analysis shows that after 60 s of treatment in N<sub>2</sub> plasma, the nitrogen content is 8 at.%, while after 300 s it is 22 at.%, the thickness of the oxynitride nanolayer being 2.5-7.2 nm. In the case of NH<sub>3</sub> plasma the thickness calculated from the sputtering time (from 50 s to 15 min) varies between 2 and 12 nm, and the nitrogen content, between 5 and 35 at.%. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | © 2010 IOP Publishing Ltd |
| Название | Plasma nitridation of silicon by N<sub>2</sub> and NH<sub>3</sub> in PECVD reactor |
| Тип | paper |
| DOI | 10.1088/1742-6596/223/1/012010 |
| Electronic ISSN | 1742-6596 |
| Print ISSN | 1742-6588 |
| Журнал | Journal of Physics: Conference Series |
| Том | 223 |
| Первая страница | 12010 |
| Последняя страница | 12013 |
| Выпуск | 1 |
