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Автор Rosenauer, Andreas
Автор Mehrtens, Thorsten
Автор Müller, Knut
Автор Gries, Katharina
Автор Schowalter, Marco
Автор Bley, Stephanie
Автор Satyam, Parlapalli Venkata
Автор Avramescu, Adrian
Автор Engl, Karl
Автор Lutgen, Stephan
Дата выпуска 2011-11-09
dc.description Investigation of composition in InGaN quantum wells and quantum dots by TEM is hampered by formation of electron beam induced agglomeration of indium, which occurs if the specimen is exposed to the electron beam for a few minutes. In this contribution we demonstrate that compositional analysis of InGaN nanostructures is possible without this artifact if STEM Z-contrast imaging is applied instead of parallel beam illumination. The suggested method for composition analysis in InGaN is based on a comparison of intensity normalized with respect to the incident electron beam with simulated image intensity. Simulations are performed with the STEMsim program using the frozen lattice multislice approximation for which static atomic displacements were taken into account.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт Published under licence by IOP Publishing Ltd
Название 2D-composition mapping in InGaN without electron beam induced clustering of indium by STEM HAADF Z-contrast imaging
Тип paper
DOI 10.1088/1742-6596/326/1/012040
Electronic ISSN 1742-6596
Print ISSN 1742-6588
Журнал Journal of Physics: Conference Series
Том 326
Первая страница 12040
Последняя страница 12043
Аффилиация Rosenauer, Andreas; University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany;
Аффилиация Mehrtens, Thorsten; University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
Аффилиация Müller, Knut; University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
Аффилиация Gries, Katharina; University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
Аффилиация Schowalter, Marco; University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
Аффилиация Bley, Stephanie; University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
Аффилиация Satyam, Parlapalli Venkata; University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
Аффилиация Avramescu, Adrian; OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany
Аффилиация Engl, Karl; OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany
Аффилиация Lutgen, Stephan; OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany
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