| Автор | J Huran |
| Автор | I Hotovy |
| Автор | N I Balalykin |
| Автор | A M Starikov |
| Дата выпуска | 2007-03-01 |
| dc.description | Nitrogen-doped amorphous silicon carbide films were grown by a plasma enhanced chemical vapour deposition (PE CVD) technique. The actual amount of nitrogen in the SiC films is determined by Rutherford backscattering spectrometry (RBS). For irradiation experiments we use electron beams with a kinetic energy 200 keV, a pulse duration of 300 ns, and a beam current of 150 A/cm<sup>2</sup>. It is found that with increased nitrogen doping and following activation of dopants the resistivity of the amorphous SiC films is substantially reduced. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | © 2007 IOP Publishing Ltd |
| Название | Physical and bonding characteristics of N-doped hydrogenated amorphous silicon carbide films grown by PECVD and annealed by pulsed electron beam |
| Тип | paper |
| DOI | 10.1088/1742-6596/61/1/086 |
| Electronic ISSN | 1742-6596 |
| Print ISSN | 1742-6588 |
| Журнал | Journal of Physics: Conference Series |
| Том | 61 |
| Первая страница | 430 |
| Последняя страница | 434 |
| Выпуск | 1 |
