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Автор E P Pokatilov
Автор D L Nika
Автор N D Zincenco
Автор A A Balandin
Дата выпуска 2007-12-01
dc.description We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow In<sub>x</sub>Ga<sub>1-x</sub>N channel in the center of GaN potential well. It was found that two- to fivefold increase of the room temperature electron mobility can be achieved. The tuning of the electron mobility with the external electric field or In<sub>x</sub>Ga<sub>1-x</sub>N channel can be useful for the design of GaN-based field-effect transistors and optoelectronic devices.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт © 2007 IOP Publishing Ltd
Название Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures
Тип paper
DOI 10.1088/1742-6596/92/1/012050
Electronic ISSN 1742-6596
Print ISSN 1742-6588
Журнал Journal of Physics: Conference Series
Том 92
Первая страница 12050
Последняя страница 12053
Выпуск 1

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