Автор |
E P Pokatilov |
Автор |
D L Nika |
Автор |
N D Zincenco |
Автор |
A A Balandin |
Дата выпуска |
2007-12-01 |
dc.description |
We have shown theoretically that the electron mobility in wurtzite AlN/GaN/AlN heterostructures can be enhanced by compensating the built-in electric field with the externally applied perpendicular electric field and by introducing a shallow In<sub>x</sub>Ga<sub>1-x</sub>N channel in the center of GaN potential well. It was found that two- to fivefold increase of the room temperature electron mobility can be achieved. The tuning of the electron mobility with the external electric field or In<sub>x</sub>Ga<sub>1-x</sub>N channel can be useful for the design of GaN-based field-effect transistors and optoelectronic devices. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
© 2007 IOP Publishing Ltd |
Название |
Electron-polar optical phonon scattering suppression and mobility enhancement in wurtzite heterostructures |
Тип |
paper |
DOI |
10.1088/1742-6596/92/1/012050 |
Electronic ISSN |
1742-6596 |
Print ISSN |
1742-6588 |
Журнал |
Journal of Physics: Conference Series |
Том |
92 |
Первая страница |
12050 |
Последняя страница |
12053 |
Выпуск |
1 |