CdS sensitized ZnO electrodes in photoelectrochemical cellsReport submitted to the 5th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN, Hanoi, 9–12 November 2010.
Dang, Tran Chien; Pham, Duy Long; Nguyen, Huu Lam; Pham, Van Hoi; Dang, Tran Chien; Faculty of Science, Hanoi University of Natural Resources and Environment, 41A Phu Dien Road, Tu Liem District, Hanoi, Vietnam; Pham, Duy Long; Laboratory of Thin Film Physics and Technology, Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam; Nguyen, Huu Lam; Institute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam; Pham, Van Hoi; Laboratory of Materials and Engineering of Fiber Optics, Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam
Журнал:
Advances in Natural Sciences: Nanoscience and Nanotechnology
Дата:
2010-09-01
Аннотация:
In this work, ZnO nanocrystalline thin films were obtained by evaporating Zn films using a thermal evaporation technique and then thermal treatment. The results show that after annealing at 300, 350, 400 and 450 °C for 6 h, the obtained ZnO thin films have macro-structures. The results show that at an annealing temperature of 450 °C, the ZnO thin film has the best optical properties for photo-electrodes. The incorporation of cadmium sulfide (CdS) into ZnO macro-structure thin films was investigated. A CdS thin film was vacuum-deposited onto the pre-deposited ZnO film by the thermal evaporation technique. The obtained ZnO and ZnO/CdS bilayer films were characterized by x-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The ZnO/CdS bilayer film was used in a photoelectrochemical (PEC) cell as a working electrode and a platinum electrode as a counter electrode. The electrolyte solution contained 1 M KCl and 0.1 M Na<sub>2</sub>S. The results show that the cell with the ZnO/CdS bilayer electrode had significantly improved photoelectric properties in comparison with that of the pure ZnO thin films. The best thickness of the CdS thin film deposited on ITO/ZnO substrates was around 70 nm.
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