Measurement of electron energy band structure in the valence band of MgO thin film with and without a sprayed functional layer by secondary electron emission from Auger neutralization
Choi, Joon Ho; Son, Chang Gil; Hong, Young June; Park, Byoung Choo; Uhm, Han Sup; Choi, Eun Ha; Choi, Joon Ho; Charged Particle Beam and Plasma Laboratory/PDP Research Center, Department of Electrophysics, Kwangwoon Univ, 447-1 Wolgye Dong, Nowon Gu, Seoul, Korea; Son, Chang Gil; Charged Particle Beam and Plasma Laboratory/PDP Research Center, Department of Electrophysics, Kwangwoon Univ, 447-1 Wolgye Dong, Nowon Gu, Seoul, Korea; Hong, Young June; Charged Particle Beam and Plasma Laboratory/PDP Research Center, Department of Electrophysics, Kwangwoon Univ, 447-1 Wolgye Dong, Nowon Gu, Seoul, Korea; Park, Byoung Choo; Charged Particle Beam and Plasma Laboratory/PDP Research Center, Department of Electrophysics, Kwangwoon Univ, 447-1 Wolgye Dong, Nowon Gu, Seoul, Korea; Uhm, Han Sup; Charged Particle Beam and Plasma Laboratory/PDP Research Center, Department of Electrophysics, Kwangwoon Univ, 447-1 Wolgye Dong, Nowon Gu, Seoul, Korea; Choi, Eun Ha; Charged Particle Beam and Plasma Laboratory/PDP Research Center, Department of Electrophysics, Kwangwoon Univ, 447-1 Wolgye Dong, Nowon Gu, Seoul, Korea
Журнал:
Advances in Natural Sciences: Nanoscience and Nanotechnology
Дата:
2010-12-01
Аннотация:
We have investigated the electron energy band structure of MgO thin film with and without a sprayed functional layer (FL), based on the Auger neutralization theory by a gamma-focused ion beam (γ-FIB) system. We have measured the secondary electron emission characteristics of MgO thin film with and without the sprayed FL, and from which their respective energy band structure f<sub>e</sub>(α) functions have also been investigated by using an He ion beam with ionization energy 24.58 eV through Fast Fourier Transform (FFT) and inverse-Fast Fourier Transform (IFFT).
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