| Автор | Nguyen, Huu Hung |
| Автор | Wei, Pal Jen |
| Автор | Lin, Jen Fin |
| Дата выпуска | 2011-03-01 |
| dc.description | This study applied an in situ electric contact resistance technique to monitor delamination induced by indentation loads. A suddenly increasing indentation depth, together with a simultaneous drop in monitoring contact current, suggests that delamination occurred. During unloading processes, the rapid decrease in both contact depth and current imply that the delaminated film was suspended as long as the indentation load became sufficiently small. When delamination occurred during oscillating processes, the contact current was found to drop from an initial value to a steady value, which is related to a loss of interfacial contact. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 2011 Vietnam Academy of Science & Technology |
| Название | Electric contact resistance for monitoring nanoindentation-induced delamination |
| Тип | paper |
| DOI | 10.1088/2043-6262/2/1/015007 |
| Electronic ISSN | 2043-6262 |
| Print ISSN | 2043-6254 |
| Журнал | Advances in Natural Sciences: Nanoscience and Nanotechnology |
| Том | 2 |
| Первая страница | 15007 |
| Последняя страница | 15010 |
| Аффилиация | Nguyen, Huu Hung; Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan |
| Аффилиация | Wei, Pal Jen; Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan |
| Аффилиация | Lin, Jen Fin; Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan; Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan; Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan |
| Выпуск | 1 |
