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Автор Janssens, Ewald
Автор Lievens, Peter
Дата выпуска 2011-06-01
dc.description Structural growth mechanisms for metal doped nanoclusters are investigated in combined experimental and theoretical studies. In particular, silicon, copper and gold clusters incorporating a transition metal dopant atom are investigated: Si<sub>n</sub>X (X=Cu, V), Cu<sub>n</sub>Sc<sup>+</sup> and Au<sub>n</sub>Y<sup>+</sup> with n < 20. The doped clusters are produced with a dual-target dual-laser vaporization source. Structural information about the doped nanoclusters is provided by infrared multi-photon dissociation spectroscopy. Their size and composition dependent stability is studied with photofragmentation and mass spectrometry. A detailed understanding of the role of the dopant atom in the structural growth and in the electronic structure of the clusters is obtained by comparison with quantum chemical computations using density functional theory.
Формат application.pdf
Издатель Institute of Physics Publishing
Копирайт 2011 Vietnam Academy of Science & Technology
Название Growth mechanisms for doped clusters
Тип rev
DOI 10.1088/2043-6262/2/2/023001
Electronic ISSN 2043-6262
Print ISSN 2043-6254
Журнал Advances in Natural Sciences: Nanoscience and Nanotechnology
Том 2
Первая страница 23001
Последняя страница 23008
Аффилиация Janssens, Ewald; Laboratory of Solid State Physics and Magnetism, Katholieke Universiteit Leuven, Celestijnenlaan d—box 2414, B-3100 Leuven, Belgium
Аффилиация Lievens, Peter; Laboratory of Solid State Physics and Magnetism, Katholieke Universiteit Leuven, Celestijnenlaan d—box 2414, B-3100 Leuven, Belgium
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