Автор |
Janssens, Ewald |
Автор |
Lievens, Peter |
Дата выпуска |
2011-06-01 |
dc.description |
Structural growth mechanisms for metal doped nanoclusters are investigated in combined experimental and theoretical studies. In particular, silicon, copper and gold clusters incorporating a transition metal dopant atom are investigated: Si<sub>n</sub>X (X=Cu, V), Cu<sub>n</sub>Sc<sup>+</sup> and Au<sub>n</sub>Y<sup>+</sup> with n < 20. The doped clusters are produced with a dual-target dual-laser vaporization source. Structural information about the doped nanoclusters is provided by infrared multi-photon dissociation spectroscopy. Their size and composition dependent stability is studied with photofragmentation and mass spectrometry. A detailed understanding of the role of the dopant atom in the structural growth and in the electronic structure of the clusters is obtained by comparison with quantum chemical computations using density functional theory. |
Формат |
application.pdf |
Издатель |
Institute of Physics Publishing |
Копирайт |
2011 Vietnam Academy of Science & Technology |
Название |
Growth mechanisms for doped clusters |
Тип |
rev |
DOI |
10.1088/2043-6262/2/2/023001 |
Electronic ISSN |
2043-6262 |
Print ISSN |
2043-6254 |
Журнал |
Advances in Natural Sciences: Nanoscience and Nanotechnology |
Том |
2 |
Первая страница |
23001 |
Последняя страница |
23008 |
Аффилиация |
Janssens, Ewald; Laboratory of Solid State Physics and Magnetism, Katholieke Universiteit Leuven, Celestijnenlaan d—box 2414, B-3100 Leuven, Belgium |
Аффилиация |
Lievens, Peter; Laboratory of Solid State Physics and Magnetism, Katholieke Universiteit Leuven, Celestijnenlaan d—box 2414, B-3100 Leuven, Belgium |
Выпуск |
2 |