The effect of the etching process on the morphology and photoluminescence of porous amorphous SiC
Nguyen, Hoai Anh; Miyajima, Kensuke; Itoh, Tadashi; Dao, Tran Cao; Cao, Tuan Anh; Luong, Truc Quynh Ngan; Ashida, Masaaki; Nguyen, Hoai Anh; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Vietnam; Miyajima, Kensuke; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan; Itoh, Tadashi; INSD, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan; Dao, Tran Cao; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Vietnam; Cao, Tuan Anh; Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan Road, Hanoi, Vietnam; Luong, Truc Quynh Ngan; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Hanoi, Vietnam; Ashida, Masaaki; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
Журнал:
Advances in Natural Sciences: Nanoscience and Nanotechnology
Дата:
2011-06-01
Аннотация:
Porous amorphous silicon carbide (P-aSiC) was prepared by an electrochemical etching method. The surface morphology of the samples was measured by an atomic force microscope (AFM). Photoluminescence (PL) and PL excitation spectra of the samples were measured at room temperature. We observed clear dependence of PL spectra and morphology on fabrication conditions. Based on these results, we propose the emitting mechanism of the PL from the samples.
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