Raman photoluminescence spectra of silicon nanowires synthesized by a vapor phase transport method
Chu, Anh Tuan; Thi, Thu Trang Nguyen; Tran, Thanh Thuy; Vu, Binh Nam; Pham, Toan Thang; Pham, Van Tuan; Pham, Thanh Huy; Pham, Hong Duong; Chu, Anh Tuan; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam; Thi, Thu Trang Nguyen; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam; Tran, Thanh Thuy; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam; Vu, Binh Nam; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam; Pham, Toan Thang; Advanced Institute for Science and Technology, Hanoi University of Science and Technology, 1 Dai Co Viet , Hanoi, Vietnam; Pham, Van Tuan; Advanced Institute for Science and Technology, Hanoi University of Science and Technology, 1 Dai Co Viet , Hanoi, Vietnam; Pham, Thanh Huy; Advanced Institute for Science and Technology, Hanoi University of Science and Technology, 1 Dai Co Viet , Hanoi, Vietnam; Pham, Hong Duong; Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Vietnam
Журнал:
Advances in Natural Sciences: Nanoscience and Nanotechnology
Дата:
2011-09-01
Аннотация:
Silicon nanowires were successfully synthesized by a thermal evaporation method. We have observed a strong and broad emission band centered at 670 nm, which is attributed to the quantum confinement effect related to Si nanostructures embedded in the complex SiO<sub>x</sub> matrix. By fitting an experimental Raman spectrum, we confirm that the as-received wires possess crystalline silicon cores whose sizes were around 5 nm. Furthermore, the abnormal dependence of integral photoluminescence intensity on measured temperature was investigated.
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