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Автор Lubarda, Vlado, A.
Дата выпуска 1998
dc.description The relationship between the film thickness and dislocation spacing in the interface dislocation arrays is studied by using a criterion based on the energy difference between the relaxed film configuration and a selected, partially relaxed or unrelaxed reference configuration. It is shown that arrays with lower dislocation density are formed in relaxation processes that are more gradual. Stability of arrays is examined, and new bounds of the stable range are constructed.
Издатель Sage Publications
Название Dislocation Arrays at the Interface between an Epitaxial Layer and Its Substrate
Тип Journal Article
DOI 10.1177/108128659800300403
Print ISSN 1081-2865
Журнал Mathematics and Mechanics of Solids
Том 3
Первая страница 411
Последняя страница 431
Аффилиация Lubarda, Vlado, A., Department of Applied Mechanics and Engineering Sciences, University of California, San Diego, CA 92093-0411
Выпуск 4
Библиографическая ссылка [1] Matthews, J. W.: Misfit dislocations, in Dislocations in Solids, Vol. 2, pp. 461-545, ed., F.R.N. Nabarro, North-Holland, Amsterdam, 1979.
Библиографическая ссылка [2] Nix, W. D.: Mechanical properties of thin films. Metall. Trans. A, 20, 2217-2245 (1989).
Библиографическая ссылка [3] Fitzgerald, E. A.: Dislocations in strained-layer epitaxy: Theory, experiment, and applications. Mat. Sci. Rep., 7, 87-142 (1991).
Библиографическая ссылка [4] van der Merwe, J. H.: Strain relaxation in epitaxial overlayers. J. Elect. Mat., 20, 793-803 (1991).
Библиографическая ссылка [5] Freund, L. B.: The mechanics of dislocations in strained-layer semiconductor materials, in Advances in Applied Mechanics, Vol. 30, pp. 1-66, eds., J. W. Hutchinson and T. Y. Wu, Academic Press, New York, 1993.
Библиографическая ссылка [6] Willis, J. R., Jain, S. C., and Bullough, R.: The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructures. Phil. Mag. A, 62, 115-129 (1990).
Библиографическая ссылка [7] Willis, J. R., Jain, S. C., and Bullough, R.: The energy of an array of dislocations II. Consideration of a capped epitaxial layer. Phil. Mag. A, 64, 629-640 (1991).
Библиографическая ссылка [8] Jain, S. C., Gosling, T. J., Willis, J. R., Totterdell, D.H.J., and Bullough, R.: A new study of critical layer thickness, stability and strain relaxation in pseudomorphic GexSil-x strained epilayers. Phil. Mag. A, 65, 1151-1167 (1992).
Библиографическая ссылка [9] Gosling, T. J., Jain, S. C., Willis, J. R., Atkinson, A., and Bullough, R.: Stable configurations in strained epitaxial layers. Phil. Mag. A, 66, 119-132 (1992).
Библиографическая ссылка [10] Beltz, G. E. and Freund, L. B.: Analysis of the strained-layer critical thickness concept based on a Peierls-Nabarro model of a threading dislocation. Phil. Mag. A, 69, 183-202 (1994).
Библиографическая ссылка [11] Gosling, T. J. and Willis, J. R.: The energy of arrays of dislocations in an anisotropic half-space. Phil. Mag. A, 69, 65-90 (1994).
Библиографическая ссылка [12] Willis, J. R., Jain, S. C., and Bullough, R.: Work hardening and strain relaxation in strained-layer buffers. Appl. Phys. Lett., 59(8), 920-922 (1991).
Библиографическая ссылка [13] Gosling, T. J., Bullough, R., Jain, S. C., and Willis, J. R.: Misfit dislocation distributions in capped (buried) strained semiconductor layers. J. Appl. Phys., 73, 8267-8278 (1993).
Библиографическая ссылка [14] Freund, L. B.: The stability of a dislocation threading a strained layer on a substrate. J. Appl. Mech., 54, 553-557 (1987).
Библиографическая ссылка [15] Freund, L. B.: The driving force for glide of athreading dislocation in a strained epitaxial layer on a substrate. J. Mech. Phys. Solids, 38, 657-679 (1990).
Библиографическая ссылка [16] Matthews, J. W. and Blakeslee, A. E.: Defects in epitaxial multilayers I. Misfit dislocations. J. Cryst. Growth, 27, 118-125 (1974).
Библиографическая ссылка [17] Lubarda, V. A.: Energy analysis of dislocation arrays near bimaterial interfaces. Int. J. Solids Struct., 34, 1053-1073 (1997).

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