EPITAXIAL THIN-FILM CRYSTAL GROWTH IN SPACE ULTRA-VACUUM

Abstract

A new concept for materials processing in space with the expectation of future manufacturing in that environment exploits the ultra-vacuum component of space for thin-film epitaxial growth. The unique low earth orbit space environment is expected to yield vacuum levels of 10-14 torr or better, semi-infinite pumping speed and large ultra-vacuum volume (10's to 100's of cubic meters) without walls. These space ultra-vacuum characteristics promise major improvement in the quality, throughput, and new materials and devices possibilities of epitaxially grown thin films, especially in the area of semiconductors for microelectronics use. For such improved crystalline thin-film materials there is expected a very large value added from space ultra-vacuum processing, and as a result the application of the epitaxial thin-film growth technology to space could lead to major commercial efforts in space.