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The Institute of Physics ( IOP ) по журналам "Chinese Physics Letters"

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  • 0.5981 μm Sum Frequency Mixing in KTP Crystal
    Shen Hongyuan; Zhou Yuping; Lin Wenxiong; Zeng Ruirong; Yu Guifang; Huang Chenghui; Zeng Zhengdong; Zhang Weijia; Jia Shouquan; Jiang Peizhi; Xiao Chaoliang (Institute of Physics Publishing, 1991-04-01)
  • 150-W Tm<sup>3+</sup>-Doped Fiber Lasers With Different Cooling Techniques and Output Couplings
    Tang Yu-Long; Xu Jian-Qiu; Chen Wei; Li Shi-Yu (Institute of Physics Publishing, 2010-10-01)
  • (2+1)-Dimensional Envelope Solitons in a Disk-Shaped Bose-Einstein Condensate
    Huang Guo-Xiang; Huang Guo-Xiang; Key Laboratory for Optical and Magnetic Resonance Spectroscopy and Department of Physics, East China Normal University, Shanghai 200062 (Institute of Physics Publishing, 2003-06-01)
  • (2+1)-Dimensional Envelope Solitons in Nonlinear Magnetic Metamaterials
    Cui, Wei-Na; Zhu, Yong-Yuan; Li, Hong-Xia; Liu, Su-Mei; Cui, Wei-Na; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093; Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094; Zhu, Yong-Yuan; National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093; Li, Hong-Xia; Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094; Liu, Su-Mei; Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094 (Institute of Physics Publishing, 2010-11-01)
  • A (2+1)-Dimensional Displacement Shallow Water Wave System
    Liu Ping; Lou Sen-Yue (Institute of Physics Publishing, 2008-09-01)
  • A 0.18-μm 3.3 V 16 k Bits 1R1T Phase Change Random Access Memory (PCRAM) Chip
    Ding Sheng; Song Zhi-Tang; Liu Bo; Zhu Min; Chen Xiao-Gang; Chen Yi-Feng; Shen Ju; Fu Cong; Feng Song-Lin; Ding Sheng; Ding Sheng; Song Zhi-Tang; Ding Sheng; Liu Bo; Ding Sheng; Zhu Min; Ding Sheng; Chen Xiao-Gang; Ding Sheng; Chen Yi-Feng; Ding Sheng; Shen Ju; Ding Sheng; Fu Cong; Ding Sheng; Feng Song-Lin; Ding Sheng (Institute of Physics Publishing, 2008-10-01)
  • A 10 Gb/s Directly-Modulated 1.3 μm InAs/GaAs Quantum-Dot Laser
    Ji Hai-Ming; Yang Tao; Cao Yu-Lian; Xu Peng-Fei; Gu Yong-Xian; Liu Yu; Xie Liang; Wang Zhan-Guo (Institute of Physics Publishing, 2010-03-01)
  • A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth
    Zhao Qian; Pan Jiao-Qing; Zhou Fan; Wang Bao-Jun; Wang Lu-Feng; Wang Wei; Zhao Qian; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Pan Jiao-Qing; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Zhou Fan; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Bao-Jun; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Lu-Feng; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Wei; National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (Institute of Physics Publishing, 2005-08-01)
  • A 10.7 μm InGaAs/InAlAs Quantum Cascade Detector
    Kong, Ning; Liu, Jun-Qi; Li, Lu; Liu, Feng-Qi; Wang, Li-Jun; Wang, Zhan-Guo; Lu, Wei; Kong, Ning; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Liu, Jun-Qi; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Li, Lu; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Liu, Feng-Qi; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Wang, Li-Jun; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Wang, Zhan-Guo; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083; Lu, Wei; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (Institute of Physics Publishing, 2010-12-01)
  • A 1100<sup>+</sup> V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination
    Cao, Dong-Sheng; Lu, Hai; Chen, Dun-Jun; Han, Ping; Zhang, Rong; Zheng, You-Dou; Cao, Dong-Sheng; Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; Lu, Hai; Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; National Key Laboratory of Monolithic Circuits and Modules, Nanjing Electron Devices Institute, Nanjing 210016; Chen, Dun-Jun; Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; Han, Ping; Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; Zhang, Rong; Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093; Zheng, You-Dou; Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (Institute of Physics Publishing, 2011-01-01)
  • A 115-W Ytterbium-Doped Fibre Laser
    Zhou Jun; Lou Qi-Hong; Kong Ling-Feng; Wu Zhong-Lin; Xue Dong; Dong Jing-Xing; Wei Yun-Rong; Ye Zhen-Huan; Zhu Jian-Qiang; Wang Zhi-Jiang; Zhou Jun; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Lou Qi-Hong; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Kong Ling-Feng; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Wu Zhong-Lin; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Xue Dong; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Dong Jing-Xing; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Wei Yun-Rong; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Ye Zhen-Huan; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Zhu Jian-Qiang; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800; Wang Zhi-Jiang; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (Institute of Physics Publishing, 2004-06-01)
  • A 18-W Signal Average Power Nanosecond LiB<sub>3</sub>O<sub>5</sub> Optical Parametric Oscillator around 860 nm and the Beam Quality
    Li Hui-Qing; Geng Ai-Cong; Bo Yong; Peng Qin-Jun; Cui Da-Fu; Xu Zu-Yan (Institute of Physics Publishing, 2005-07-01)
  • A 2.048-μm Tm,Ho:GdVO<sub>4</sub> Laser Pumped Doubly Resonant Optical Parametric Oscillator Based on Periodically Poled Lithium LiNbO<sub>3</sub>
    Zhang Xing-Bao; Yao Bao-Quan; Ju You-Lun; Wang Yue-Zhu; Zhang Xing-Bao; National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001; Yao Bao-Quan; National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001; Ju You-Lun; National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001; Wang Yue-Zhu; National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001 (Institute of Physics Publishing, 2007-07-01)
  • A 4.8-W M<sup>2</sup> = 4.6 Continuous-Wave Intracavity Sum-Frequency Diode-Pumped Solid-State Yellow Laser
    Bo Yong; Geng Ai-Cong; Lu Yuan-Fu; Yang Xiao-Dong; Peng Qin-Jun; Cui Qian-Jin; Cui Da-Fu; Xu Zu-Yan; Bo Yong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Geng Ai-Cong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Lu Yuan-Fu; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Yang Xiao-Dong; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Peng Qin-Jun; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Cui Qian-Jin; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Cui Da-Fu; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080; Xu Zu-Yan; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (Institute of Physics Publishing, 2006-06-01)
  • A 40-Gbit/s 1-to-2 Photonic Data Distributor Employing a Single Semiconductor Optical Amplifier
    Zhang, Yin; Dong, Jian-Ji; Lei, Lei; He, Hao; Huang, De-Xiu; Zhang, Xin-Liang; Zhang, Yin; Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074; Dong, Jian-Ji; Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074; Lei, Lei; Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074; He, Hao; Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074; Huang, De-Xiu; Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074; Zhang, Xin-Liang; Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (Institute of Physics Publishing, 2011-06-01)
  • A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix
    Yang Di; Li Yan-Ping; Chen Shao-Wu; Yu Jin-Zhong; Yang Di; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Li Yan-Ping; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Chen Shao-Wu; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Yu Jin-Zhong; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (Institute of Physics Publishing, 2005-06-01)
  • A 526 W Diode-Pumped Nd:YAG Ceramic Slab Laser
    Chen, Yan-Zhong; Liu, Wen-Bin; Bo, Yong; Jiang, Ben-Xue; Xu, Jian; Kou, Hua-Min; Xu, Yi-Ting; Pan, Yu-Bai; Xu, Jia-Lin; Guo, Ya-Ding; Yang, Feng-Tu; Peng, Qin-Jun; Cui, Da-Fu; Jiang, Dong-Liang; Xu, Zu-Yan; Chen, Yan-Zhong; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Graduate School of Chinese Academy of Sciences, Beijing 100190; Liu, Wen-Bin; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 20050; Bo, Yong; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Jiang, Ben-Xue; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 20050; Xu, Jian; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Graduate School of Chinese Academy of Sciences, Beijing 100190; Kou, Hua-Min; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 20050; Xu, Yi-Ting; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Graduate School of Chinese Academy of Sciences, Beijing 100190; Pan, Yu-Bai; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 20050; Xu, Jia-Lin; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Guo, Ya-Ding; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Yang, Feng-Tu; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Peng, Qin-Jun; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Cui, Da-Fu; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190; Jiang, Dong-Liang; Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 20050; Xu, Zu-Yan; RCLPT, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (Institute of Physics Publishing, 2011-09-01)
  • A [111]-Cut Si Hemisphere Two-Photon Response Photodetector
    Liu, Xiu-Huan; Chen, Zhan-Guo; Jia, Gang; Wang, Hai-Yan; Gao, Yan-Jun; Li, Yi; Liu, Xiu-Huan; College of Communication Engineering, Jilin University, Changchun 130012; Chen, Zhan-Guo; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012; Jia, Gang; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012; Wang, Hai-Yan; College of Communication Engineering, Jilin University, Changchun 130012; Gao, Yan-Jun; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012; Li, Yi; College of Communication Engineering, Jilin University, Changchun 130012 (Institute of Physics Publishing, 2011-11-01)
  • A ``Which Way'' Experiment of Two-Photon Interference
    Wang Qin; Huang Yun-Feng; Sun Fang-Wen; Zhang Yong-Sheng; Guo Guang-Can; Wang Qin; Key Laboratory of Quantum Information, Department of Physics, University of Science and Technology of China, Hefei 230026; Huang Yun-Feng; Key Laboratory of Quantum Information, Department of Physics, University of Science and Technology of China, Hefei 230026; Sun Fang-Wen; Key Laboratory of Quantum Information, Department of Physics, University of Science and Technology of China, Hefei 230026; Zhang Yong-Sheng; Key Laboratory of Quantum Information, Department of Physics, University of Science and Technology of China, Hefei 230026; Guo Guang-Can; Key Laboratory of Quantum Information, Department of Physics, University of Science and Technology of China, Hefei 230026 (Institute of Physics Publishing, 2005-02-01)
  • A Base-Emitter Self-Aligned Multi-Finger Si<sub>1−x</sub>Ge<sub>x</sub>/Si Power Heterojunction Bipolar Transistor
    Xue Chun-Lai; Yao Fei; Shi Wen-Hua; Cheng Bu-Wen; Wang Hong-Jie; Yu Jin-Zhong; Wang Qi-Ming; Xue Chun-Lai; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Yao Fei; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Shi Wen-Hua; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Cheng Bu-Wen; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Hong-Jie; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Yu Jin-Zhong; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Wang Qi-Ming; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (Institute of Physics Publishing, 2007-07-01)