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Cambridge University Press по названию

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  • Неизвестный автор (Cambridge University Press. Cambridge, UK, 1995-08-01)
  • Неизвестный автор (Cambridge University Press. New York, USA, 1996-09-01)
  • Неизвестный автор (Cambridge University Press. New York, USA, 1996-05-01)
    The end of the cold war and the political and economic reforms in Russia have opened a new era in our relationship and have provided the international community with real possibilities for cooperation in the fields of ...
  • Неизвестный автор (Cambridge University Press. New York, USA, 1995-05-01)
  • Неизвестный автор (Cambridge University Press. New York, USA, 1997-10-01)
    We've agreed on new steps to organize our nations to lay a strong foundation in the 21st century, to prepare our people and our economies for the global marketplace, to meet new transnational threats to our security, to ...
  • Неизвестный автор (Cambridge University Press. New York, USA, 1998-07-01)
    The Heads of State or Government of the G7 countries and the President of the European Commission met today, 15 May, to discuss the world economic and financial situation, and the challenges we face in strengthening the ...
  • Dubowski J.J.; Wrobel J.M.; Rolfe S.; Jackman J.A.; Mazur J.H.; Noadw J. (Cambridge University Press. New York, USA, 1989--01)
    A study of Ga and In outdiffusion into Cd1−xMnxTe (0≥ x ≥ .70) epitaxial layers grown on (111)GaAs and (001)lnSb was carried out. The layers were grown by pulsed laser evaporation and epitaxy on substrates held at temperatures ...
  • Yao Huade; Snyder Paul G; Woollam John A (Cambridge University Press. New York, USA, 1990--01)
    Spectroscopic ellipsometric (SE) measurements of GaAs (100) were carried out in an ultrahigh vacuum (UHV) chamber, without arsenic overpressure, at temperatures ranging from room temperature (RT) to ∼610°C. Surface changes ...
  • Windhorn T. H.; Turner G. W.; Metze G. M. (Cambridge University Press. New York, USA, 1986--01)
    One approach to the development of optical interconnects between Si systems utilizes diode lasers fabricated in III-V epitaxial layers grown on Si wafers. We have fabricated double-heterostructure lasers in GaAs/AlGaAs ...
  • Elman B.; Koteles Emil S.; Melman P.; Armiento C. A. (Cambridge University Press. New York, USA, 1988--01)
    Low energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with ...
  • Yuasa T.; Nagashima Y.; Egawa T.; Jimbo T.; Umeno M. (Cambridge University Press. New York, USA, 1992--01)
    We reported a waveguide-type optical switch fabricated on a Si substrate which utilized the Quantum Confined Stark Effect (QCSE). The prepared sample is an Al0.3Ga0.7As (cladding layer) / Al0.25Ga0.75As (guiding layer) ...
  • Baba Masakazu; Matsui Shinji (Cambridge University Press. New York, USA, 1991--01)
    GaAs etching with Cl2 gas is studied with a scanning tunneling microscope (STM). Both Cl2 gas and tunnel electron assist etching occur under the tip during scanning and the etching profile is found to depend on the gas ...
  • Black Jerry G.; Doran Scott P.; Rothschild Mordechai; Sedlacek Jan H.C.; Ehrlich Daniel J. (Cambridge University Press. New York, USA, 1986--01)
    Laser-direct-writing processes are employed to fabricate a GaAs digital integrated circuit. The lithography-free techniques deposit and etch conductors and resistors, and remove insulating layers, thus enabling multilevel ...
  • Munukutla L. V.; Cheng S. H.; Anderson S. J. (Cambridge University Press. New York, USA, 1992--01)
    High voltage GaAs Schottky rectifiers fabricated using vapor phase epitaxy have been observed to be an order of magnitude higher in switching speeds than silicon. Measured rectifier barrier heights deduced from the I-V and ...
  • Kondo Naoto; Nanishi Yasushi; Shibata Tomohiro; Yamamoto Norio; Fujimoto Masatomo (Cambridge University Press. New York, USA, 1991--01)
    Electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) is a new technique for GaAs growth. This paper describes surface cleaning of GaAs and Si substrates at fairly low temperatures using hydrogen ...
  • Su Chaochin; Dai Zi-Guo; Hou Hui-Qi; Xi Ming; Vernon Matthew F.; Bent Brian E. (Cambridge University Press. New York, USA, 1993--01)
    Results in the literature indicate that C12 etches GaAs at room temperature but HCl etches GaAs at a measurable rate only at temperatures above ∼670 K. In this work, molecular beam scattering and surface analysis techniques ...
  • Ohmachi Yoshiro; Shinoda Yukinobu; Oku Satoshi (Cambridge University Press. New York, USA, 1986--01)
    An approach to the composite layer growth of GaAs/Ge on Si(100) and insulator–coated Si(100) has been investigated. To overcome a problem of antiphase disorder of GaAs occurring along with epitaxial growth on Ge, thermal ...
  • Posthill J.B.; Venkatasubramanian R.; Malta D.P.; Hattangady S.V.; Fountain G.G.; Timmons M.L.; Markunas R.J. (Cambridge University Press. New York, USA, 1990--01)
    The novel concept of using a SixGe1–x multilayer structure as a buffer layer between a silicon substrate and a GaAs epitaxial layer to accommodate the GaAs/Si 4.1% lattice mismatch is introduced. Initial results using a ...
  • Kim Michael E.; Oki Aaron K.; Camou James B.; Gorman Gary M.; Umemoto Donald K.; Hafizi Madjid E.; Pawlowicz Leszek M.; Stolt Kjell S.; Mulvey Virginia M. (Cambridge University Press. New York, USA, 1988--01)
    GaAs/AlGaAs N-p-n heterojunction bipolar transistor (GaAs HBT) device and integrated circuit technology which offers key advantages over advanced silicon bipolar and III-V compound field-effect transistors is maturing ...
  • Shichijo Hisashi; Lee Jhang Woo (Cambridge University Press. New York, USA, 1986--01)
    The characteristics of GaAs MESFETs in GaAs-on-Si have been studied in detail for digital IC applications. The device structure utilizes GaAs and AlGaAs undoped buffer layers grown on a 3 degrees off (100) silicon substrate ...