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  • TEICH ANDREW F.; QIAN NING (Cambridge University Press. New York, USA, 2010-03-01)
    Orientation adaptation and perceptual learning change orientation tuning curves of V1 cells. Adaptation shifts tuning curve peaks away from the adapted orientation, reduces tuning curve slopes near the adapted orientation, ...
  • Wu Chun-Guey; Marcy Henry O.; DeGroot Donald C.; Kannewurf Carl R.; Kanatzidis Mercouri G. (Cambridge University Press. New York, USA, 1989--01)
    Intercalative polymerization of aniline, pyrrole and 2,2’-bithiophene in vanadium oxide xerogels results in electrically conductive novel materials which are composed of alternating monolayers of metal-oxide and conductive ...
  • Неизвестный автор (Cambridge University Press. Cambridge, UK, 1986-07-01)
    218 Charter of mutual societas by Peter [the Venerable], abbot of Cluny, to Abbot Hugh [I] and the convent of Reading. On the death of the abbot of Reading, his successor shall be elected from the monks of that house or ...
  • Неизвестный автор (Cambridge University Press. Cambridge, UK, 1936-07-01)
  • Johnson R.A.; Brown J.R. (Cambridge University Press. New York, USA, 1992-12-01)
    Equations for the concentrations of vacancies and antisite defects in ordered alloys in thermodynamic equilibrium at and near stoichiometry have been derived as functions of defect energies and a Lagrangian parameter. While ...
  • Nomura Miki; Lee Sing-Yun; Adams James B. (Cambridge University Press. New York, USA, 1991-01-01)
    Vacancy diffusion along two different high-angle twist grain boundaries (Σ5 and Σ13) was studied using the Embedded Atom Method (EAM). Vacancy formation energies in all the possible sites were calculated and found to be ...
  • Kavanagh K. L.; Magee C. W.; Sheets J. (Cambridge University Press. New York, USA, 1987--01)
    The diffusivity of Si and P in GaAs encapsulated with heavily-doped polysilicon (poly-Si) is correlated to the flux of Ga and As diffusing from the substrate into the encapsulant. A model based on the diffusion of vacancies ...
  • Chen P.; Steckl A.J. (Cambridge University Press. New York, USA, 1993--01)
    The Al-Ga inter-diffusion induced by Si FIB implantation and subsequent RTA were investigated in an Al0.3Ga0.7As/GaAs superlattice with equal 3.5 nm barrier and well widths. Si++ was accelerated to 50 kV as well as 100kV ...
  • Wille L. T.; Berera A.; De Fontaine D.; Moss S. C. (Cambridge University Press. New York, USA, 1987--01)
    The ordering in the Cu-O basal plane of the high Tc superconductor YBa2Cu3Oz is investigated. Asymmetric pairwise interactions between nearest and next nearest neighbors are assumed. Ordering instabilities in two-dimensional ...
  • Ghisoni M.; Rivers A. W.; Lee K.; Parry G.; Zhang X.; Staton-Bevan A.; Pate M.; Hill G.; Button C.; Roberts J. S. (Cambridge University Press. New York, USA, 1992--01)
    In this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device ...
  • Kim S.M. (Cambridge University Press. New York, USA, 1991-07-01)
    A theory of vacancy formation in Cu3Au-type ordered fcc alloys is presented. The present theory, which is based on the pairwise bonding model, is found to be in good agreement with the experimentally observed vacancy ...
  • Kim S.M. (Cambridge University Press. New York, USA, 1990--01)
    The recently formulated theory of vacancy formation in CsCl-type ordered alloys has been applied to β-NiGa and β-NiAl. The observed Nisublattice vacancy concentrations in these compounds could be well described by the ...
  • Packard William E.; Dow John D.; Doverspike Kathleen; Kaplan Ray; Nicolaides Ruth (Cambridge University Press. New York, USA, 1997-03-01)
    Scanning tunneling microscopy images are reported for the wurtzite GaN(0001) surface. Terraces are observed, with three kinds of defect structures that are assigned to ordered N-vacancies: (i) striations perpendicular to ...
  • Clement J. J. (Cambridge University Press. New York, USA, 1992--01)
    Time-dependent vacancy concentration profiles are calculated numerically as solutions to the electromigration transport equation under dc and pulsed dc current stress conditions in finite-length conductors. An electromigration ...
  • Roorda S.; Hakvoort R. A.; van Veen A.; Stolk P. A.; Saris F. W. (Cambridge University Press. New York, USA, 1991--01)
    Amorphous Si has been investigated by variable-energy positron annihilation spectroscopy (PAS) and lifetime measurements of optically generated free carriers. The density of positron-trapping defects can be reduced by ...
  • Hautojdärvi P.; Huttunen P.; Mäkinen J.; Punkka E.; Vehanen A. (Cambridge University Press. New York, USA, 1987--01)
    Variable-energy positron beam studies have been made on ion implanted silicon. After 35, 60 and 100 keV H+ implantation a clear separation between vacancy and H atom distributions was found. In 100 keV As+ and P+ implanted ...
  • Ascheron C.; Krause R.; Polity A.; Sobotta H.; Riede V. (Cambridge University Press. New York, USA, 1992--01)
    In proton-bombarded InP single crystals the fluence-dependent production of vacancy-type radiation defects and their annealing behaviour are studied. The results are interpreted using measurements of the total defect ...
  • Неизвестный автор (Cambridge University Press. Cambridge, UK, 1982--01)
  • Payton C. D.; Scarisbrick D. A.; Sikotra S.; Flower A. J. E. (Cambridge University Press. Cambridge, UK, 1993-02-01)
    A retrospective analysis of levels of antibody to hepatitis B surface antigen in 1419 health care workers was carried out to compare the efficacy of intramuscular and intradermal administration of plasma derived and ...
  • Smith J. W. G.; Pollard R. (Cambridge University Press. Cambridge, UK, 1979-08-01)
    An injection of influenza vaccine was offered to approximately 60 000 Postal and Telecommunications staff at the beginning of five successive winters. The sickness absence of this group, which included those who accepted ...