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Cambridge University Press по журналам "MRS Proceedings"

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  • Inoue K.; Takai M.; IshibashI K.; Kawata Y.; Suzuki N.; Namba S. (Cambridge University Press. New York, USA, 1988--01)
    A nuclear microprobe-forming system for the microscopic RBS/PIXE measurement of micro devices has been developed and installed at the Research Center for Extreme Materials, Osaka University. The use of precision quadrupole ...
  • Payson J. Scott; Abdulaziz Salmam; Li Yang; Woodyard James R. (Cambridge University Press. New York, USA, 1990--01)
    Irradiation of thin films and solar cells with 1.00 MeV protons has been investigated for a fluence of 5.0E14 cm−2. We have used photothermal deflection spectroscopy and light conductivity to characterize the effect of ...
  • Haond M.; Dutartre D.; Bensahel D. (Cambridge University Press. New York, USA, 1985--01)
    By using a halogen lamp recrystalization system, we show that a patterning of the underlying oxide of SOI structures allows a high yield of localization of the remaining defects generally encountered in zone melting ...
  • Zheng Haixing; Hu Yi; Choi Yun‐Seung; Lin Patrick; Mackenzie J.D. (Cambridge University Press. New York, USA, 1989--01)
  • Jincang Zhang; Aisheng He; Yujing Huo; Yusheng He (Cambridge University Press. New York, USA, 1989--01)
    Superconducting fibers of [Bi,Pb(Sb)]2Sr2Ca2Cu3O10 + x high Tc superconducting materials have been prepared by means of the laser-heated pedestal growth method with Tc 0= 110K and Jc>103 A/cm2. Structure analysis showed ...
  • Fang Jianxin; Schulson Erland M. (Cambridge University Press. New York, USA, 1992--01)
    Slip and fracture behavior in Ni3Ge with and without 0.06 at.% Boron has been examined by in-situstraining in a TEM. Crack propagate in a zig-zag, transgranular manner and the crack planes are coincident with the slip ...
  • Whittenberger J. Daniel; Viswanadham R. K.; Mannan S. K.; Kumar K. S. (Cambridge University Press. New York, USA, 1988--01)
    Owing to their superior strength in comparison to other single phase intermetallics, NiAl-Ni2AlTi alloys have potential for the matrix material in high temperature composites. An investigation of two compositions, Ni-40Al-10Ti ...
  • Mcdaniel D. H.; Boolchand P.; Bresser W. J.; Eklund P. C. (Cambridge University Press. New York, USA, 1982--01)
    Stage 2 samples of graphite-SbF5 intercalVtion compounds were prepared by reacting SbF5 with HOPG at 200°C for 5 days. 121Sb Mössbauer spectra taken at 4.2K reveal an intense and narrow feature in the Sb(5+) region and a ...
  • Boolchand P.; Bresser W.; Mcdaniel D.; Eklund P.C.; Billaud D.; Fischer J.E. (Cambridge University Press. New York, USA, 1982--01)
    We have examined graphite salts of the composition C23nSbF6(CH3NO2)1,7 n = 1,2 by121Sb Mössbauer spectroscopy at 4.2K. The spectra reveal a strong and narrow feature in the Sb5+ region and no evidence of any features in ...
  • Ripmeester John A.; Ratcliffe Christopher I. (Cambridge University Press. New York, USA, 1991--01)
    It is shown that the interpretation of 129Xe chemical shift measurements in microporous solids is not simple, and that considerable caution must be used both in the measurement and interpretation of results, especially for ...
  • Whittenberger J. Daniel; Arzt Eduard; Luton Michael J. (Cambridge University Press. New York, USA, 1990--01)
    Cryomilling (high intensity mechanical ball milling in a liquid nitrogen bath) of the B2 crystal structure nickel aluminide leads to a NiAl-AlN composite containing about 10 vol pct second phase which is dispersed as very ...
  • Dominguez D.D.; Resing H.A.; Poranski C.F.; Murday J.S. (Cambridge University Press. New York, USA, 1982--01)
    The 13C NMR lines of the stage I cesium graphite compound are broad (ca. 600 Hz) at all orientations, reflecting immobile Cs intercalation; in terms of an axial pattern the principal values are δ11 = 95 ± 5 and δ┴6 = 130 ...
  • Pontcharra J. De; Spinelli P.; Bruel M. (Cambridge University Press. New York, USA, 1985--01)
    The need for low temperature processes in VLSI CMOS technology has led to increasing interest in fully implanted wells. In comparison with diffused wells the advantages are good control of the doping profile, low lateral ...
  • Boolchand P.; Lemon G.; Bresser W.; Mcdaniel D.; Heinz R.E.; Eklund P.C.; Stumpp E.; Nietfeld G. (Cambridge University Press. New York, USA, 1982--01)
    151Eu Mössbauer experiments on EuC13-Alcl3 graphite flakes and HOPG samples have been performed as a function of temperature in the range 4.2K < T < 300K and indicate the presence of a narrow line characteristic of Eu3+. ...
  • Kechouane M.; Beldi N.; Mohammed-Brahim T.; L'Haridon H.; Salvi M.; Gauneau M. (Cambridge University Press. New York, USA, 1993--01)
    The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. ...
  • Kechouane M.; Beldi N.; Mohammed-Brahim T.; L'Haridon H.; Salvi M.; Gauneau M.; Favennec P.N. (Cambridge University Press. New York, USA, 1993--01)
    The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. ...
  • Rios Jara D.; Morin M.; Guénin G. (Cambridge University Press. New York, USA, 1983--01)
    An unexpected 18R martensite to martensite transformation was obtained in Cu-Zn-Al alloy during the training process for 18R single crystal preparation: this later was induced from a β1 single crystal by application of a ...
  • Armacost K. D.; Babu S. V.; Nguyen S. V.; Rembetski J. F. (Cambridge University Press. New York, USA, 1986--01)
    193-nm excimer laser-assisted etching of polysilicon was studied in vacuum and in the presence of Ar, CF3 Br, CF2 Cl2, and NF3. In inert atmospheres (vacuum, Ar) exposure to the laser led to jagged profiles at high fluences ...
  • Van Nguyen Son; Fridmann S.; Rembetski J. (Cambridge University Press. New York, USA, 1987--01)
    193-nm excimer laser-assisted etching of polysilicon was studied in the presence of CI2. Maximum etch rates of 1.25 Å/pulse were obtained for pressures of about 400 torr and fluences exceeding 400 mJ/(cm2-pulse). The etch ...
  • Dreyer Michael L. (Cambridge University Press. New York, USA, 1991--01)
    Electromigration in Al-1.5%Cu interconnects was studied using a direct current (d.c.) induced 1/f2 noise spectrum. The interconnects were fabricated with a multi-step sputter deposition process, with deposition temperatures ...