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Cambridge University Press по журналам "MRS Proceedings"

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  • Inoue K.; Takai M.; IshibashI K.; Kawata Y.; Suzuki N.; Namba S. (Cambridge University Press. New York, USA, 1988--01)
    A nuclear microprobe-forming system for the microscopic RBS/PIXE measurement of micro devices has been developed and installed at the Research Center for Extreme Materials, Osaka University. The use of precision quadrupole ...
  • Payson J. Scott; Abdulaziz Salmam; Li Yang; Woodyard James R. (Cambridge University Press. New York, USA, 1990--01)
    Irradiation of thin films and solar cells with 1.00 MeV protons has been investigated for a fluence of 5.0E14 cm−2. We have used photothermal deflection spectroscopy and light conductivity to characterize the effect of ...
  • Whittenberger J. Daniel; Viswanadham R. K.; Mannan S. K.; Kumar K. S. (Cambridge University Press. New York, USA, 1988--01)
    Owing to their superior strength in comparison to other single phase intermetallics, NiAl-Ni2AlTi alloys have potential for the matrix material in high temperature composites. An investigation of two compositions, Ni-40Al-10Ti ...
  • Ripmeester John A.; Ratcliffe Christopher I. (Cambridge University Press. New York, USA, 1991--01)
    It is shown that the interpretation of 129Xe chemical shift measurements in microporous solids is not simple, and that considerable caution must be used both in the measurement and interpretation of results, especially for ...
  • Whittenberger J. Daniel; Arzt Eduard; Luton Michael J. (Cambridge University Press. New York, USA, 1990--01)
    Cryomilling (high intensity mechanical ball milling in a liquid nitrogen bath) of the B2 crystal structure nickel aluminide leads to a NiAl-AlN composite containing about 10 vol pct second phase which is dispersed as very ...
  • Dominguez D.D.; Resing H.A.; Poranski C.F.; Murday J.S. (Cambridge University Press. New York, USA, 1982--01)
    The 13C NMR lines of the stage I cesium graphite compound are broad (ca. 600 Hz) at all orientations, reflecting immobile Cs intercalation; in terms of an axial pattern the principal values are δ11 = 95 ± 5 and δ┴6 = 130 ...
  • Pontcharra J. De; Spinelli P.; Bruel M. (Cambridge University Press. New York, USA, 1985--01)
    The need for low temperature processes in VLSI CMOS technology has led to increasing interest in fully implanted wells. In comparison with diffused wells the advantages are good control of the doping profile, low lateral ...
  • Boolchand P.; Lemon G.; Bresser W.; Mcdaniel D.; Heinz R.E.; Eklund P.C.; Stumpp E.; Nietfeld G. (Cambridge University Press. New York, USA, 1982--01)
    151Eu Mössbauer experiments on EuC13-Alcl3 graphite flakes and HOPG samples have been performed as a function of temperature in the range 4.2K < T < 300K and indicate the presence of a narrow line characteristic of Eu3+. ...
  • Kechouane M.; Beldi N.; Mohammed-Brahim T.; L'Haridon H.; Salvi M.; Gauneau M. (Cambridge University Press. New York, USA, 1993--01)
    The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. ...
  • Kechouane M.; Beldi N.; Mohammed-Brahim T.; L'Haridon H.; Salvi M.; Gauneau M.; Favennec P.N. (Cambridge University Press. New York, USA, 1993--01)
    The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. ...
  • Dreyer Michael L. (Cambridge University Press. New York, USA, 1991--01)
    Electromigration in Al-1.5%Cu interconnects was studied using a direct current (d.c.) induced 1/f2 noise spectrum. The interconnects were fabricated with a multi-step sputter deposition process, with deposition temperatures ...
  • Parman C.E.; Israeloff N.E.; Fan J.; Kakalios J. (Cambridge University Press. New York, USA, 1993--01)
    The coplanar current in n-lype doped hydrogenated amorphous silicon (a-Si:H) displays random telegraph switching noise, indicating the presence of inhomogeneous current filaments whose conductance varies with time. There ...
  • Lee J.W.; Bowen D.K.; Salerno J.P. (Cambridge University Press. New York, USA, 1987--01)
    In an effort to evaluate the near surface crystal quality of GaAs on Si wafers, {224} plane diffraction were investigated using a conventional double crystal x-ray diffractometer without any high intensity radiation source. ...
  • Laul J. C.; Smith M. R.; Hubbard N. (Cambridge University Press. New York, USA, 1985--01)
    The 234U/230Th ratio serves as an in-situ indicator of the redox state in groundwater aquifers. The higher this ratio, the more U there is in the +6 valance state and thus a less reducing environment. Radium sorption is ...
  • Schramke Janet A.; Simonson Scott A.; Coles David G. (Cambridge University Press. New York, USA, 1984--01)
    A series of hydrothermal experiments were carried out on 237Np- and 239Pu-doped PNL 76–68 glass, synthetic basalt groundwater, basalt, and cast steel. These hydrothermal experiments are part of the Basalt Waste Isolation ...
  • Lin Chia-Cheng; Basil John D. (Cambridge University Press. New York, USA, 1986--01)
    The hydrolysis and initial condensation reactions of Si(OC2H5)4 and low order polyethoxysiloxanes have been studied with high resolution 29Si NMR and size exclusion chromatography/FTIR spectroscopy. The effects of various ...
  • Devreux F.; Boilot J.P.; Chaput F.; Lecomte A. (Cambridge University Press. New York, USA, 1990--01)
    The complete condensation kinetics of three silicon alkoxides have been studied by 29 Si NMR in the conditions of rapid hydrolysis (acidic medium, water in excess). The gelation of the tetravalent TEOS takes several weeks, ...
  • Berkel C Van; Bird N C; Curling C J; French I D (Cambridge University Press. New York, USA, 1993--01)
    2D image sensor arrays made with a-Si devices on glass over large area are of considerable interest as document scanners and in medical applications. We have made a test array containing a-Si NIP diodes for both the sensors ...
  • Rooks M. J.; Mceuen P.; Wind S.; Prober D. E. (Cambridge University Press. New York, USA, 1986--01)
    The study of quantum interference effects in metallic structures requires the lithographic resolution of electron-beam lithography. Resolution and reproducibility can be greatly enhanced by the use of a multilayer resist. ...
  • Eckert Hellmut; Franke Deanna; Lathrop David; Maxwell Robert; Tullius Michael (Cambridge University Press. New York, USA, 1989--01)
    While the utility of solid state NMR to provide structural information in amorphous systems is well established in silicate and borate glasses, the systematic application of modern NMR techniques to non-oxidic systems has ...