Aggregation at a surface: crossover behaviour in a biased diffusion model
R Kapral; S G Whittington; C Desai; R Kapral; Dept. of Chem., Toronto Univ., Ont., Canada; S G Whittington; Dept. of Chem., Toronto Univ., Ont., Canada; C Desai; Dept. of Chem., Toronto Univ., Ont., Canada
Журнал:
Journal of Physics A: Mathematical and General
Дата:
1986-06-21
Аннотация:
The authors introduce a biased diffusion model of aggregation at a surface, which reduces to a ballistic model in one limit. They characterise the structure of the aggregates by a variety of properties and find that it is a strong function of the parameter governing the diffusion process. For thin films there is a crossover between a regime where there are several highly ramified pseudo-one-dimensional clusters and another regime where there is a single cluster which spans the lattice in both directions.
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