Fabrication of self-aligned gated field emitters
D Liu; T S Ravi; B G Bagley; K K Chin; R B Marcus; D Liu; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA; T S Ravi; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA; B G Bagley; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA; K K Chin; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA; R B Marcus; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Журнал:
Journal of Micromechanics and Microengineering
Дата:
1992-03-01
Аннотация:
Reports a new self-aligned process to form gated field emitters including an evaluation of dielectrics and field emission measurements. This process offers advantages including gate opening control down to 0.25 mu m diameter without electron-beam writing assistance, a planar structure, and thick dielectric for capacitance reduction. The current-voltage characterization of the gated field emitter follows Fowler-Nordheim behavior. Leakage characteristics of various dielectric materials are measured and described.
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