| Автор | D Liu |
| Автор | T S Ravi |
| Автор | B G Bagley |
| Автор | K K Chin |
| Автор | R B Marcus |
| Дата выпуска | 1992-03-01 |
| dc.description | Reports a new self-aligned process to form gated field emitters including an evaluation of dielectrics and field emission measurements. This process offers advantages including gate opening control down to 0.25 mu m diameter without electron-beam writing assistance, a planar structure, and thick dielectric for capacitance reduction. The current-voltage characterization of the gated field emitter follows Fowler-Nordheim behavior. Leakage characteristics of various dielectric materials are measured and described. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Fabrication of self-aligned gated field emitters |
| Тип | paper |
| DOI | 10.1088/0960-1317/2/1/005 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 2 |
| Первая страница | 21 |
| Последняя страница | 24 |
| Аффилиация | D Liu; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA |
| Аффилиация | T S Ravi; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA |
| Аффилиация | B G Bagley; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA |
| Аффилиация | K K Chin; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA |
| Аффилиация | R B Marcus; Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA |
| Выпуск | 1 |
