Statistical model of semiconductor field emitter with atomically clean surface
R Z Bakhtizin; S S Ghots; P V Glazer; R Z Bakhtizin; Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia; S S Ghots; Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia; P V Glazer; Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia
Журнал:
Journal of Micromechanics and Microengineering
Дата:
1993-06-01
Аннотация:
The statistical characteristics of low-frequency field emission current fluctuations contain information about the microscopic properties of solid surfaces. For p-type Ge with an atomically clean surface the distribution functions of the field emission current noise from local surface areas of about 10<sup>-12</sup> cm<sup>2</sup> in the frequency range 2*10<sup>3</sup> Hz have been investigated. A new method has been developed to simulate field electron microscopy. A pseudo relief of the emitting site is simulated making use of experimental data on variations of the distribution function with time. A 'noise pattern image' of the emitting site of the surface investigated is presented in this paper.
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