| Автор | R Z Bakhtizin |
| Автор | S S Ghots |
| Автор | P V Glazer |
| Дата выпуска | 1993-06-01 |
| dc.description | The statistical characteristics of low-frequency field emission current fluctuations contain information about the microscopic properties of solid surfaces. For p-type Ge with an atomically clean surface the distribution functions of the field emission current noise from local surface areas of about 10<sup>-12</sup> cm<sup>2</sup> in the frequency range 2*10<sup>3</sup> Hz have been investigated. A new method has been developed to simulate field electron microscopy. A pseudo relief of the emitting site is simulated making use of experimental data on variations of the distribution function with time. A 'noise pattern image' of the emitting site of the surface investigated is presented in this paper. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Statistical model of semiconductor field emitter with atomically clean surface |
| Тип | paper |
| DOI | 10.1088/0960-1317/3/2/002 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 3 |
| Первая страница | 45 |
| Последняя страница | 48 |
| Аффилиация | R Z Bakhtizin; Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia |
| Аффилиация | S S Ghots; Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia |
| Аффилиация | P V Glazer; Dept. of Phys. Electron., Bashkir State Univ., Ufa, Russia |
| Выпуск | 2 |
