Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation
M C Acero; A Perez-Rodriguez; J Esteve; J Montserrat; B Garrido; A Romano-Rodriguez; J R Morante; M C Acero; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain; A Perez-Rodriguez; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain; J Esteve; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain; J Montserrat; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain; B Garrido; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain; A Romano-Rodriguez; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain; J R Morante; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain
Журнал:
Journal of Micromechanics and Microengineering
Дата:
1993-09-01
Аннотация:
The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2*10<sup>17</sup> cm<sup>-2</sup> to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5*10<sup>17</sup>cm<sup>-2</sup>, layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses.
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