| Автор | M C Acero |
| Автор | A Perez-Rodriguez |
| Автор | J Esteve |
| Автор | J Montserrat |
| Автор | B Garrido |
| Автор | A Romano-Rodriguez |
| Автор | J R Morante |
| Дата выпуска | 1993-09-01 |
| dc.description | The analysis of the etch-stop properties of layers obtained by substoichiometric nitrogen-ion implantation and annealing in silicon has been performed as a function of the implantation conditions. The analysis of the etching efficiency has been tested in TMAH-IPA systems. The results obtained show the need to implant at doses higher than 2*10<sup>17</sup> cm<sup>-2</sup> to obtain etch-stop layers stable under high-temperature annealing. So, for implantation doses of 5*10<sup>17</sup>cm<sup>-2</sup>, layers stand unetched for times longer than 2 h. The preliminary structural analysis of the samples suggests the presence of an amorphous silicon nitride layer for higher implantation doses. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Analysis of buried etch-stop layers in silicon by nitrogen-ion implantation |
| Тип | paper |
| DOI | 10.1088/0960-1317/3/3/012 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 3 |
| Первая страница | 143 |
| Последняя страница | 145 |
| Аффилиация | M C Acero; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain |
| Аффилиация | A Perez-Rodriguez; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain |
| Аффилиация | J Esteve; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain |
| Аффилиация | J Montserrat; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain |
| Аффилиация | B Garrido; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain |
| Аффилиация | A Romano-Rodriguez; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain |
| Аффилиация | J R Morante; Centro Nacional de Microelectronica, Campus Univ. Autonoma de Barcelona, Spain |
| Выпуск | 3 |
