⁴He ions of various energies and at various doses were implanted into three kinds of samples: TiH₂ films, high purity Ti pieces as-received and after hydrogenation. Thermal release of helium was monitored in-situ by proton-enhanced backscattering. Low-temperature helium release was observed at T ≤ 573K. Single jump model was used to calculate the active energies for the release. Based on the observations, a mechanism of helium cluster-vacancy complex (He_mV_n-V_i) for low-temperature helium release is proposed.