| Автор | Gou Cheng-ling |
| Автор | Wang Pei-xuan |
| Автор | Fang Zheng-zhi |
| Автор | Xia Zong-huang |
| Автор | Shen Ding-yu |
| Автор | Wang Xue-mei |
| Дата выпуска | 1997-10-01 |
| dc.description | <sup>4</sup>He ions of various energies and at various doses were implanted into three kinds of samples: TiH<sub>2</sub> films, high purity Ti pieces as-received and after hydrogenation. Thermal release of helium was monitored in-situ by proton-enhanced backscattering. Low-temperature helium release was observed at T ≤ 573K. Single jump model was used to calculate the active energies for the release. Based on the observations, a mechanism of helium cluster-vacancy complex (He<sub>m</sub>V<sub>n</sub>-V<sub>i</sub>) for low-temperature helium release is proposed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A microscopic mechanism of low temperature helium release |
| Тип | paper |
| DOI | 10.1088/1004-423X/6/10/009 |
| Print ISSN | 1004-423X |
| Журнал | Acta Physica Sinica (Overseas Edition) |
| Том | 6 |
| Первая страница | 771 |
| Последняя страница | 779 |
| Выпуск | 10 |
