Temperature dependence of the photothermal conductivity of semiconductors at low temperatures
H W H M Jongbloets; M J H van de Steeg; J H M Stoelinga; P Wyder; H W H M Jongbloets; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands; M J H van de Steeg; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands; J H M Stoelinga; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands; P Wyder; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1980-04-20
Аннотация:
A careful analysis has been made of the temperature dependence of the signal strength in a photoconductivity experiment in a semiconductor. The temperature dependence of the line intensity in a photothermal conductivity spectrum has been calculated. The results are in excellent agreement with measurements on high-purity germanium containing boron, aluminium and phosphorus as residual impurities ( approximately 10<sup>11</sup> atoms cm<sup>-3</sup>).
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