| Автор | H W H M Jongbloets |
| Автор | M J H van de Steeg |
| Автор | J H M Stoelinga |
| Автор | P Wyder |
| Дата выпуска | 1980-04-20 |
| dc.description | A careful analysis has been made of the temperature dependence of the signal strength in a photoconductivity experiment in a semiconductor. The temperature dependence of the line intensity in a photothermal conductivity spectrum has been calculated. The results are in excellent agreement with measurements on high-purity germanium containing boron, aluminium and phosphorus as residual impurities ( approximately 10<sup>11</sup> atoms cm<sup>-3</sup>). |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Temperature dependence of the photothermal conductivity of semiconductors at low temperatures |
| Тип | paper |
| DOI | 10.1088/0022-3719/13/11/013 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 13 |
| Первая страница | 2139 |
| Последняя страница | 2145 |
| Аффилиация | H W H M Jongbloets; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Аффилиация | M J H van de Steeg; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Аффилиация | J H M Stoelinga; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Аффилиация | P Wyder; Res. Inst. for Materials, Univ. of Nijmegen, Nijmegen, Netherlands |
| Выпуск | 11 |
