Electrodiffusion of shallow donors in CdS crystals
N E Korsunskaya; I V Markevich; T V Torchinskaya; M K Sheinkman; N E Korsunskaya; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR; I V Markevich; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR; T V Torchinskaya; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR; M K Sheinkman; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1980-06-10
Аннотация:
Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Li<sub>i</sub> and Cd<sub>i</sub>, drift in an electric field.
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