| Автор | N E Korsunskaya |
| Автор | I V Markevich |
| Автор | T V Torchinskaya |
| Автор | M K Sheinkman |
| Дата выпуска | 1980-06-10 |
| dc.description | Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Li<sub>i</sub> and Cd<sub>i</sub>, drift in an electric field. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electrodiffusion of shallow donors in CdS crystals |
| Тип | paper |
| DOI | 10.1088/0022-3719/13/16/007 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 13 |
| Первая страница | 2975 |
| Последняя страница | 2978 |
| Аффилиация | N E Korsunskaya; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR |
| Аффилиация | I V Markevich; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR |
| Аффилиация | T V Torchinskaya; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR |
| Аффилиация | M K Sheinkman; Inst. of Semiconductors, Acad. of Sci., Kiev, Ukrainian SSR, USSR |
| Выпуск | 16 |
