Deep impurities and critical points in semiconductors
H N Nazareno; M A Amato; H N Nazareno; Dept. de Fisica, Univ. de Brasilia, Brasilia, Brazil; M A Amato; Dept. de Fisica, Univ. de Brasilia, Brasilia, Brazil
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1982-04-10
Аннотация:
A simple model for identifying a deep level in semiconductors is suggested. It is shown that the relative positions of the critical points of the host can be related to the maximum of the photoionisation spectrum.
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