| Автор | H N Nazareno |
| Автор | M A Amato |
| Дата выпуска | 1982-04-10 |
| dc.description | A simple model for identifying a deep level in semiconductors is suggested. It is shown that the relative positions of the critical points of the host can be related to the maximum of the photoionisation spectrum. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Deep impurities and critical points in semiconductors |
| Тип | paper |
| DOI | 10.1088/0022-3719/15/10/016 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 15 |
| Первая страница | 2165 |
| Последняя страница | 2168 |
| Аффилиация | H N Nazareno; Dept. de Fisica, Univ. de Brasilia, Brasilia, Brazil |
| Аффилиация | M A Amato; Dept. de Fisica, Univ. de Brasilia, Brasilia, Brazil |
| Выпуск | 10 |
