Electrical resistivity of mixed-valence systems in a two-band model
H V Sharma; I Singh; H V Sharma; Dept. of Phys., Univ. of Roorkee, Roorkee, India; I Singh; Dept. of Phys., Univ. of Roorkee, Roorkee, India
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1983-04-10
Аннотация:
The authors study here the variation of electrical resistivity with temperature of mixed-valence systems using a two-band model. They find various types of behaviour (e.g. metallic and semiconducting) for a different set of parameters in the theory. Results are compared with recent experimental findings on various mixed-valence systems, e.g. SmS, SmB<sub>6</sub>, CePd<sub>3</sub>.
236.4Кб