| Автор | H V Sharma |
| Автор | I Singh |
| Дата выпуска | 1983-04-10 |
| dc.description | The authors study here the variation of electrical resistivity with temperature of mixed-valence systems using a two-band model. They find various types of behaviour (e.g. metallic and semiconducting) for a different set of parameters in the theory. Results are compared with recent experimental findings on various mixed-valence systems, e.g. SmS, SmB<sub>6</sub>, CePd<sub>3</sub>. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electrical resistivity of mixed-valence systems in a two-band model |
| Тип | lett |
| DOI | 10.1088/0022-3719/16/10/005 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 16 |
| Первая страница | L279 |
| Последняя страница | L283 |
| Аффилиация | H V Sharma; Dept. of Phys., Univ. of Roorkee, Roorkee, India |
| Аффилиация | I Singh; Dept. of Phys., Univ. of Roorkee, Roorkee, India |
| Выпуск | 10 |
