Identification of EL2 in GaAs as the As<sub>Ga</sub> antisite centre
M Deiri; K P Homewood; B C Cavenett; M Deiri; Dept. of Phys., Univ. of Hull, Hull, UK; K P Homewood; Dept. of Phys., Univ. of Hull, Hull, UK; B C Cavenett; Dept. of Phys., Univ. of Hull, Hull, UK
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1984-08-20
Аннотация:
An investigation in SI GaAs of the photoquenching of the magnetic circular dichroism optically detected magnetic resonance (MCD-ODMR) signals of the antisite, As<sub>Ga</sub>, defect shows that this centre can be identified as the dominant deep donor EL2. The results suggest that EL2 is the neutral state, D<sup>0</sup>, of the antisite, implying that the metastable state is the triplet state of this two-electron defect.
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