| Автор | M Deiri |
| Автор | K P Homewood |
| Автор | B C Cavenett |
| Дата выпуска | 1984-08-20 |
| dc.description | An investigation in SI GaAs of the photoquenching of the magnetic circular dichroism optically detected magnetic resonance (MCD-ODMR) signals of the antisite, As<sub>Ga</sub>, defect shows that this centre can be identified as the dominant deep donor EL2. The results suggest that EL2 is the neutral state, D<sup>0</sup>, of the antisite, implying that the metastable state is the triplet state of this two-electron defect. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Identification of EL2 in GaAs as the As<sub>Ga</sub> antisite centre |
| Тип | lett |
| DOI | 10.1088/0022-3719/17/23/007 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 17 |
| Первая страница | L627 |
| Последняя страница | L632 |
| Аффилиация | M Deiri; Dept. of Phys., Univ. of Hull, Hull, UK |
| Аффилиация | K P Homewood; Dept. of Phys., Univ. of Hull, Hull, UK |
| Аффилиация | B C Cavenett; Dept. of Phys., Univ. of Hull, Hull, UK |
| Выпуск | 23 |
