Tunneling and magneto-tunnelling effects in n<sup>+</sup>GaAs/(AlGa)As/n<sup>-</sup>GaAs/n<sup>+</sup>GaAs devices
P S S Guimaraes; D C Taylor; B R Snell; L Eaves; K E Singer; G Hill; M A Pate; G A Toombs; F W Sheard; P S S Guimaraes; Dept. of Phys., Nottingham Univ., UK; D C Taylor; Dept. of Phys., Nottingham Univ., UK; B R Snell; Dept. of Phys., Nottingham Univ., UK; L Eaves; Dept. of Phys., Nottingham Univ., UK; K E Singer; Dept. of Phys., Nottingham Univ., UK; G Hill; Dept. of Phys., Nottingham Univ., UK; M A Pate; Dept. of Phys., Nottingham Univ., UK; G A Toombs; Dept. of Phys., Nottingham Univ., UK; F W Sheard; Dept. of Phys., Nottingham Univ., UK
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1985-07-20
Аннотация:
Oscillatory stuctures recently reported by Hickmott et al. (1984) in the I-V characteristics of n<sup>+</sup>GaAs/(AlGa)As/n<sup>-</sup>GaAs/n<sup>+</sup>GaAs tunnelling devices are observed at zero magnetic field and temperatures up to 50K, demonstrating that neutralisation of donors by magnetic freeze-out in the n<sup>-</sup>GaAs layer is not required to observe the structure.
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