| Автор | P S S Guimaraes |
| Автор | D C Taylor |
| Автор | B R Snell |
| Автор | L Eaves |
| Автор | K E Singer |
| Автор | G Hill |
| Автор | M A Pate |
| Автор | G A Toombs |
| Автор | F W Sheard |
| Дата выпуска | 1985-07-20 |
| dc.description | Oscillatory stuctures recently reported by Hickmott et al. (1984) in the I-V characteristics of n<sup>+</sup>GaAs/(AlGa)As/n<sup>-</sup>GaAs/n<sup>+</sup>GaAs tunnelling devices are observed at zero magnetic field and temperatures up to 50K, demonstrating that neutralisation of donors by magnetic freeze-out in the n<sup>-</sup>GaAs layer is not required to observe the structure. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Tunneling and magneto-tunnelling effects in n<sup>+</sup>GaAs/(AlGa)As/n<sup>-</sup>GaAs/n<sup>+</sup>GaAs devices |
| Тип | lett |
| DOI | 10.1088/0022-3719/18/20/007 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 18 |
| Первая страница | L605 |
| Последняя страница | L609 |
| Аффилиация | P S S Guimaraes; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | D C Taylor; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | B R Snell; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | L Eaves; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | K E Singer; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | G Hill; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | M A Pate; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | G A Toombs; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | F W Sheard; Dept. of Phys., Nottingham Univ., UK |
| Выпуск | 20 |
