0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time
K Thonke; A Hangleiter; J Wagner; R Sauer; K Thonke; Phys. Inst., Stuttgart Univ., West Germany; A Hangleiter; Phys. Inst., Stuttgart Univ., West Germany; J Wagner; Phys. Inst., Stuttgart Univ., West Germany; R Sauer; Phys. Inst., Stuttgart Univ., West Germany
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1985-09-20
Аннотация:
Highly excited states of the 0.79 eV luminescent defect observed in photoluminescence excitation (PLE) measurements are interpreted as effective-mass (EMT) states of a pseudo-donor with E<sub>i</sub>=38.3 meV. The interpretation implies that the 1s ground state of the donor electron is fivefold split in the C<sub>1h</sub> symmetric strain field of the defect. Modelling of the internal deformation around the defect by a compressive uniaxial field of 80 MPa along (001) allows the authors to explain the ground state splitting quantitatively and gives rise to a re-interpretation of published uniaxial stress data. Transient decay data suggest that the lowest excited defect state is a split singlet-triplet bound exciton, the 0.79 eV line being emitted by the higher-energy singlet.
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