| Автор | K Thonke |
| Автор | A Hangleiter |
| Автор | J Wagner |
| Автор | R Sauer |
| Дата выпуска | 1985-09-20 |
| dc.description | Highly excited states of the 0.79 eV luminescent defect observed in photoluminescence excitation (PLE) measurements are interpreted as effective-mass (EMT) states of a pseudo-donor with E<sub>i</sub>=38.3 meV. The interpretation implies that the 1s ground state of the donor electron is fivefold split in the C<sub>1h</sub> symmetric strain field of the defect. Modelling of the internal deformation around the defect by a compressive uniaxial field of 80 MPa along (001) allows the authors to explain the ground state splitting quantitatively and gives rise to a re-interpretation of published uniaxial stress data. Transient decay data suggest that the lowest excited defect state is a split singlet-triplet bound exciton, the 0.79 eV line being emitted by the higher-energy singlet. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | 0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time |
| Тип | lett |
| DOI | 10.1088/0022-3719/18/26/005 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 18 |
| Первая страница | L795 |
| Последняя страница | L801 |
| Аффилиация | K Thonke; Phys. Inst., Stuttgart Univ., West Germany |
| Аффилиация | A Hangleiter; Phys. Inst., Stuttgart Univ., West Germany |
| Аффилиация | J Wagner; Phys. Inst., Stuttgart Univ., West Germany |
| Аффилиация | R Sauer; Phys. Inst., Stuttgart Univ., West Germany |
| Выпуск | 26 |
