Degenerate n-type GaAs doped with Cr: an intermediate-valence and/or Kondo system?
P S S Guimaraes; K R Duncan; L Eaves; K W H Stevens; R M Bowley; J C Portal; J Cisowski; M S Skolnick; D J Stirland; P S S Guimaraes; Dept. of Phys., Nottingham Univ., UK; K R Duncan; Dept. of Phys., Nottingham Univ., UK; L Eaves; Dept. of Phys., Nottingham Univ., UK; K W H Stevens; Dept. of Phys., Nottingham Univ., UK; R M Bowley; Dept. of Phys., Nottingham Univ., UK; J C Portal; Dept. of Phys., Nottingham Univ., UK; J Cisowski; Dept. of Phys., Nottingham Univ., UK; M S Skolnick; Dept. of Phys., Nottingham Univ., UK; D J Stirland; Dept. of Phys., Nottingham Univ., UK
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1985-03-10
Аннотация:
The Cr<sup>1+</sup> level in GaAs (the so-called two-electron trap level) is investigated using optical absorption and de Haas-Shubnikov measurements for a series of heavily doped n-type samples with Fermi levels up to 120 meV above the conduction band edge. The level is shown to have the form of a broadened distribution of width 26 meV centred at 45 meV (4K) above the band edge. Analogues with intermediate-valence and Kondo systems are briefly discussed.
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