| Автор | P S S Guimaraes |
| Автор | K R Duncan |
| Автор | L Eaves |
| Автор | K W H Stevens |
| Автор | R M Bowley |
| Автор | J C Portal |
| Автор | J Cisowski |
| Автор | M S Skolnick |
| Автор | D J Stirland |
| Дата выпуска | 1985-03-10 |
| dc.description | The Cr<sup>1+</sup> level in GaAs (the so-called two-electron trap level) is investigated using optical absorption and de Haas-Shubnikov measurements for a series of heavily doped n-type samples with Fermi levels up to 120 meV above the conduction band edge. The level is shown to have the form of a broadened distribution of width 26 meV centred at 45 meV (4K) above the band edge. Analogues with intermediate-valence and Kondo systems are briefly discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Degenerate n-type GaAs doped with Cr: an intermediate-valence and/or Kondo system? |
| Тип | paper |
| DOI | 10.1088/0022-3719/18/7/010 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 18 |
| Первая страница | 1431 |
| Последняя страница | 1437 |
| Аффилиация | P S S Guimaraes; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | K R Duncan; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | L Eaves; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | K W H Stevens; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | R M Bowley; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | J C Portal; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | J Cisowski; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | M S Skolnick; Dept. of Phys., Nottingham Univ., UK |
| Аффилиация | D J Stirland; Dept. of Phys., Nottingham Univ., UK |
| Выпуск | 7 |
