| Автор | M A R Al-Mudares |
| Автор | B K Ridley |
| Дата выпуска | 1986-06-20 |
| dc.description | A detailed Monte Carlo simulation of hot-electron transport at 77K in a AlGaAs/GaAs quantum well has been carried out in the bulk-phonon approximation taking into account quasi-two-dimensional electron-electron scattering along with other quasi-two-dimensional scattering mechanisms and the effects of degeneracy, but neglecting dynamic screening and plasmon interactions. It is shown that for an intermediate range of AlGaAs donor concentrations (10<sup>17</sup>-10<sup>18</sup> cm<sup>-3</sup>) a scattering-induced negative differential resistance (SI-NDR) occurs as previously predicted. The threshold for the onset of SI-NDR is significantly less than the thresholds for either inter-valley or real-space transfer; hence the latter mechanisms are thereby delayed to higher fields. It is pointed out that SI-NDR has a much faster relaxation time than either inter-valley or real-space transfer. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Monte Carlo simulation of scattering-induced negative differential resistance in AlGaAs/GaAs quantum wells |
| Тип | paper |
| DOI | 10.1088/0022-3719/19/17/014 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 19 |
| Первая страница | 3179 |
| Последняя страница | 3192 |
| Аффилиация | M A R Al-Mudares; Dept. of Phys., Essex Univ., Colchester, UK |
| Аффилиация | B K Ridley; Dept. of Phys., Essex Univ., Colchester, UK |
| Выпуск | 17 |
