Electron and hole transport in bismuth
J - P Michenaud; J -P Issi; J - P Michenaud; Univ. Catholique Louvain, Belgium; J -P Issi; Univ. Catholique Louvain, Belgium
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1972-10-31
Аннотация:
Measurements of the low field galvanomagnetic tensor components of bismuth from 77 to 300K are reported. The eight magnetoresistivity coefficients A<sub>ij</sub> are found to vary as T<sup>-2</sup> up to nearly 120 K, then as T<sup>-3.9</sup> from 120 to 300 K. The electronic parameters are computed. The values of the electron ellipsoid tilt angle lie between 6 degrees 40' and 8 degrees 30' and the carrier density varies from 4.55*10<sup>17</sup> to 24.5*10<sup>17</sup> cm<sup>-3</sup> at 77 K and 300 K respectively. All mobilities except mu <sub>2</sub> vary as T<sup>-2</sup> in the lowest temperature range.
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