| Автор | J - P Michenaud |
| Автор | J -P Issi |
| Дата выпуска | 1972-10-31 |
| dc.description | Measurements of the low field galvanomagnetic tensor components of bismuth from 77 to 300K are reported. The eight magnetoresistivity coefficients A<sub>ij</sub> are found to vary as T<sup>-2</sup> up to nearly 120 K, then as T<sup>-3.9</sup> from 120 to 300 K. The electronic parameters are computed. The values of the electron ellipsoid tilt angle lie between 6 degrees 40' and 8 degrees 30' and the carrier density varies from 4.55*10<sup>17</sup> to 24.5*10<sup>17</sup> cm<sup>-3</sup> at 77 K and 300 K respectively. All mobilities except mu <sub>2</sub> vary as T<sup>-2</sup> in the lowest temperature range. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electron and hole transport in bismuth |
| Тип | paper |
| DOI | 10.1088/0022-3719/5/21/011 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 5 |
| Первая страница | 3061 |
| Последняя страница | 3072 |
| Аффилиация | J - P Michenaud; Univ. Catholique Louvain, Belgium |
| Аффилиация | J -P Issi; Univ. Catholique Louvain, Belgium |
| Выпуск | 21 |
