Measurements of the electronic properties of semiconducting chalcogenide glasses of composition Te_x(Si_0.24G_0.20As_0.56)_1-x, both in bulk and thin film form are reported; especial care was taken to prevent the formation of a conducting skin, to which these glasses are particularly prone. Resistivity, thermoelectric power, optical absorption, and field effect mobility were measured. Room-temperature DC conduction is exclusively by holes with the Fermi level running through a high density ( approximately 10¹⁹eV^-1 cm^-3) of trapping states located near the centre of the mobility gap. The form of the temperature dependence of the DC resistivity indicates that the density of states is energy-dependent. The location of the conducting holes is discussed.