| Автор | A W Levy |
| Автор | M Green |
| Автор | W Gee |
| Дата выпуска | 1974-01-21 |
| dc.description | Measurements of the electronic properties of semiconducting chalcogenide glasses of composition Te<sub>x</sub>(Si<sub>0.24</sub>G<sub>0.20</sub>As<sub>0.56</sub>)<sub>1-x</sub>, both in bulk and thin film form are reported; especial care was taken to prevent the formation of a conducting skin, to which these glasses are particularly prone. Resistivity, thermoelectric power, optical absorption, and field effect mobility were measured. Room-temperature DC conduction is exclusively by holes with the Fermi level running through a high density ( approximately 10<sup>19</sup>eV<sup>-1</sup> cm<sup>-3</sup>) of trapping states located near the centre of the mobility gap. The form of the temperature dependence of the DC resistivity indicates that the density of states is energy-dependent. The location of the conducting holes is discussed. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The electronic properties of semiconducting chalcogenide glasses in the series Te<sub>x</sub>(Si<sub>0.24</sub>Ge<sub>0.20</sub>As<sub>0.56</sub>)<sub>1-x</sub> |
| Тип | paper |
| DOI | 10.1088/0022-3719/7/2/014 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 7 |
| Первая страница | 352 |
| Последняя страница | 370 |
| Аффилиация | A W Levy; Oxford Univ., UK |
| Аффилиация | M Green; Oxford Univ., UK |
| Аффилиация | W Gee; Oxford Univ., UK |
| Выпуск | 2 |
