Variation of carrier concentration in Pb<sub>0.8</sub>Sn<sub>0.2</sub>Te with annealing and growth temperature
C Pickering; W R Harding; N G Geeves; M L Young; C Pickering; Royal Signals & Radar Establ., Baldock, UK; W R Harding; Royal Signals & Radar Establ., Baldock, UK; N G Geeves; Royal Signals & Radar Establ., Baldock, UK; M L Young; Royal Signals & Radar Establ., Baldock, UK
Журнал:
Journal of Physics D: Applied Physics
Дата:
1977-04-21
Аннотация:
Hole concentrations in the range 10<sup>16</sup>-10<sup>18</sup> cm<sup>-3</sup> have been achieved controllably in Pb<sub>0.8</sub>Sn<sub>0.2</sub>Te by isothermal annealing of bulk crystals and isothermal growth of liquid-phase epitaxial layers at temperatures between 400 and 650 degrees C. At any given temperature, both preparation techniques gave the same carrier concentration suggesting that the results are governed by native defects. The carrier concentration varied exponentially with annealing or growth temperature with an activation energy of 1.2 eV.
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