| Автор | C Pickering |
| Автор | W R Harding |
| Автор | N G Geeves |
| Автор | M L Young |
| Дата выпуска | 1977-04-21 |
| dc.description | Hole concentrations in the range 10<sup>16</sup>-10<sup>18</sup> cm<sup>-3</sup> have been achieved controllably in Pb<sub>0.8</sub>Sn<sub>0.2</sub>Te by isothermal annealing of bulk crystals and isothermal growth of liquid-phase epitaxial layers at temperatures between 400 and 650 degrees C. At any given temperature, both preparation techniques gave the same carrier concentration suggesting that the results are governed by native defects. The carrier concentration varied exponentially with annealing or growth temperature with an activation energy of 1.2 eV. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Variation of carrier concentration in Pb<sub>0.8</sub>Sn<sub>0.2</sub>Te with annealing and growth temperature |
| Тип | lett |
| DOI | 10.1088/0022-3727/10/6/001 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 10 |
| Первая страница | L73 |
| Последняя страница | L77 |
| Аффилиация | C Pickering; Royal Signals & Radar Establ., Baldock, UK |
| Аффилиация | W R Harding; Royal Signals & Radar Establ., Baldock, UK |
| Аффилиация | N G Geeves; Royal Signals & Radar Establ., Baldock, UK |
| Аффилиация | M L Young; Royal Signals & Radar Establ., Baldock, UK |
| Выпуск | 6 |
