Atomically clean semiconductor surfaces prepared by laser irradiation
A McKinley; A W Parke; G J Hughes; J Fryar; R H Williams; A McKinley; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK; A W Parke; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK; G J Hughes; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK; J Fryar; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK; R H Williams; School of Phys. Sci., New Univ. of Ulster, Coleraine, UK
Журнал:
Journal of Physics D: Applied Physics
Дата:
1980-10-14
Аннотация:
The authors have investigated successfully the production of atomically clean surfaces of crystalline InP, crystalline Si and amorphous Si using light from a pulsed laser. Angle-resolved photoelectron spectra for surfaces of crystalline Si cleaned in this way are presented and compared with those for surfaces cleaned in other ways.
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